-^emi-conducto'i {ptoducti., una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 MRF581/MRF581a rf & microwave discrete low power transistors features . low noise - 2.5 db @ 500 mhz ? high gain, gain at optimum noise figure = 15.5 db @ 500 mhz ? ftau-5.0 ghz @ 10v, 75ma ? cost effective macrox package description: designed for high current, low power, low noise, amplifiers up to 1.0 ghz. absolute maximum ratings (tease = 25c, symbol vceo vcbo vebo ic parameter collector-emitter voltage collector-base voltage emitter-base voltage collector current MRF581 18 MRF581a 15 30 2.5 200 unit vdc vdc vdc ma thermal data p d p d tstg ' jmax total device dissipation @ tc = 50c derate above 50c total device dissipation @ tc = 25c derate above 25c storage junction temperature range maximum junction temperature 2.5 25 1.25 10 -65 to +150 150 watts mw/c watts mw/c c c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. m semi-conductors encourages customers to verify that datasheets nre current before placing orders. ./%????-? *%-* -
MRF581/MRF581a electrical specifications (tease = 25c) static (otn symbol bvceo bvcbo bvebo icbo iebo test conditions collector-emitter breakdown voltage MRF581 (1c = 5.0 madc, ib = 0) MRF581a collector-base breakdown voltage (1c = 1.0 madc, ie = 0) emitter-base breakdown voltage (ie = 0.1 madc, ic = 0) collector cutoff current (vce = 15vdc, vbe = ovdc) collector cutoff current (vce = 2.0 vdc, vbe = 0 vdc) value min. 18 15 30 2.5 - - typ. - - - - - max. - - - 0.1 0.1 unit vdc vdc vdc ma ma [on) hfe dc current gain MRF581 (1c = 50 madc, vce = 5.0 vdc) MRF581a 50 90 - 200 250 - dynamic symbol cob ftau test conditions output capacitance (vcb = 10vdc, ie = 0, f= 1.0mhz) current-gain bandwidth product (1c = 75 madc, vce = 10 vdc, f= 1.0 ghz) value min. - - typ. 2.0 5.0 max. 3.0 - unit pf ghz
MRF581/MRF581a functional symbol nfmin gnf g u max msg |s21|2 test conditions minimum noise figure MRF581 (1c = 50 madc, vce = 10 vdc, f = 0.5 ghz) MRF581 a power gain @ nfmin (1c = 50 madc, vce = 10 vdc, f = 0.5 ghz) maximum unilateral gain (1) 1c = 50 madc, vce = 10 vdc, f = 500 mhz maximum stable gain 1c = 50 madc, vce = 10 vdc, f = 500 mhz insertion gain 1c = 50 madc, vce = 10 vdc, f = 500 mhz value min. - 13 - - 14 typ. 2.5 2.0 15.5 17.8 20 15 max. 3.0 3.0 - - - unit db db db db db table 1. common emitter s-parameters, @ vce = 10 v, 1c = 50 ma f (mhz) 100 200 300 400 500 600 700 800 900 1000 s |s11| .610 659 .671 .675 .677 .678 .677 .679 .678 .682 1 z4, -137 -161 -171 -178 176 172 168 184 160 156 s71 |s21| 23.8 13.2 9.0 6.8 5.5 4.6 4.0 3.5 3.1 2.8 z<|> 116 98 89 83 77 72 68 64 60 56 s19 |s12| .026 .033 .040 .047 .055 .064 .073 .082 .092 .102 z<(> 46 47 51 55 58 61 62 63 64 65 ftyy |s22| .522 .351 .304 .292 .293 .299 .306 .314 .322 .311 z^ -78 -106 -120 -128 -132 -134 -135 -136 -138 -139
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